TOPCon Poly+ annealing process efficiency improvement mechanism
1. Poly+ annealing mechanism ① Depositing a tunneling oxide layer (SiO₂) and a doped amorphous silicon layer on the back to form a selective carrier transport channel (enabling electron tunneling and hole blocking). ② Annealing process: high temperature crystallization of amorphous silicon layer, activation of P phosphorus doping and reduction of contact resistance. 2. Factors […]
